參數(shù)資料
型號: BLV33F
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: VHF linear power transistor(VHF線性功率晶體管)
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, FM-6
文件頁數(shù): 15/20頁
文件大小: 148K
代理商: BLV33F
1996 Oct 10
15
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
Fig.18 Load power as a function of source power;
typical values.
V
CE
= 28 V; I
C(ZS)
= 0.2 A; T
h
= 70
°
C; f
vision
= 224.25 MHz.
handbook, halfpage
(W)
0
2
4
8
0
80
MGG139
6
60
40
20
PS (W)
Fig.19 Power gain and efficiency as functions of
load power; typical values.
V
CE
= 28 V; I
C(ZS)
= 0.2 A; T
h
= 70
°
C; f
vision
= 224.25 MHz.
handbook, halfpage
0
100
5
10
MGG140
50
Gp
(dB)
Gp
PL (W)
75
25
50
η
c
(%)
η
c
Ruggedness in class-AB operation
The BLV33F is capable of withstanding a full load mismatch corresponding to VSWR
2 through all phases) up to
60 W (RMS) and 85 W (PEP) under the following conditions:V
CE
= 28 V; T
h
= 70
°
C; f = 224.25 MHz; R
th mb-h
= 0.2 K/W.
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