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參數(shù)資料
| 型號： | BLV25 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF power transistor(VHF功率晶體管) |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, FM-6 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 83K |
| 代理商： | BLV25 |
August 1986
6
Philips Semiconductors
Product specification
VHF power transistor
BLV25
APPLICATION INFORMATION
R.F. performance in narrow band c.w. operation (common-emitter class-B circuit) T
h
= 25
°
C
List of components
Note
1.
ATC means American Technical Ceramics.
f
MHz
V
CE
V
P
L
W
P
S
W
G
p
dB
I
C
A
η
%
108
28
175
<
typ.
17,5
13,9
>
typ.
10,0
11,0
<
typ.
9,6
8,9
>
typ.
65
70
C1 = C3 = 7 to 100 pF film dielectric trimmer (cat. no. 2222 809 07015)
C2 = C4 = C5 = C6 = C7 = 100 pF (500 V) multilayer ceramic chip capacitor (ATC
(1)
); except for C2 these capacitors
are placed 7 mm from transistor edge
C8 = C10 = 470 pF multilayer ceramic chip capacitor (cat. no. 2222 856 13471)
C9 = C15 = 40 pF, parallel connection of 4 x 10 pF lead feed-through capacitors (cat. no. 2222 702 05109)
C11 = 100 nF multilayer ceramic chip capacitor (cat. no. 2222 852 59104)
C12 = C16 = 7 to 47 pF precision tuning capacitor (cat. no. 2222 805 00174)
C13 = 19 pF, parallel connection of 4 x 4,7 pF lead feed-through capacitors (cat. no. 2222 702 04478)
C14 = 6,8
μ
F/63 V electrolytic capacitor
L1 = Cu strip (10 mm
×
4 mm
×
0,5 mm)
L2 = strip on printed-circuit board
L3 = 7 turns closely wound enamelled Cu wire (0,3 mm); int. dia. 3,0 mm; leads 2
×
6 mm
L4 = L8 = L9 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L5 = 3 turns enamelled Cu wire (1,6 mm); int. dia. 8 mm; length 9 mm; leads 2
×
5 mm
L6 = Cu strip (27 mm
×
9 mm
×
0,5 mm)
L7 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 8 mm; length 9 mm; leads 2
×
10 mm
L2 is strip on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16 in.
R1 = 10
carbon resistor
handbook, full pagewidth
MGP299
50
50
C6
C3
C2
C1
C7
C8
C10
C11
C14
C9
C13
C15
C12
C16
L2
L6
L7
L5
L3
L1
L4
L8
L9
C5
C4
T.U.T.
R1
+
VCC
Fig.7 Class-B test circuit at f = 108 MHz.
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