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參數(shù)資料
| 型號： | BLV25 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF power transistor(VHF功率晶體管) |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, FM-6 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 83K |
| 代理商： | BLV25 |
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
BLV25
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily for use in
v.h.f.-f.m. broadcast transmitters.
FEATURES
internally matched input for
wideband operation and high
power gain;
multi-base structure and diffused
emitter ballasting resistors for an
optimum temperature profile;
gold-metallization ensures
excellent reliability.
The transistor has a
1
2
in 6-lead
flange envelope with a ceramic cap.
All leads are isolated from the flange.
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
°
C in an unneutralized common-emitter class-B circuit.
MODE OPERATION
V
CE
V
f
MHz
P
L
W
P
S
W
G
p
dB
η
%
narrow band; c.w.
28
108
175
<
17,5
>
10,0
>
65
PIN CONFIGURATION
Fig.1 Simplified outline, SOT119A.
handbook, halfpage
2
4
6
5
3
1
MSB006
PINNING
PIN
DESCRIPTION
1
2
3
4
5
6
emitter
emitter
base
collector
emitter
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
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| BLV297 | 制造商:BELLING 制造商全稱:SHANGHAI BELLING CO., LTD. 功能描述:N-channel Enhancement Mode Power MOSFET |
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| BLV31 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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