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參數(shù)資料
| 型號： | BLV2047 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor(UHF 功率晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 84K |
| 代理商： | BLV2047 |
1999 Jun 09
3
Philips Semiconductors
Product specification
UHF power transistor
BLV2047
THERMAL CHARACTERISTICS
Note
1.
Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Capacitance of die only.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
P
tot
= 270 W; T
mb
= 25
°
C; note 1
0.65
0.25
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
72
MAX.
8
100
UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
open emitter; I
C
= 40 mA
open base; I
C
= 120 mA
open collector; I
E
= 40 mA
V
CE
= 26 V; V
BE
= 0
V
CE
= 10 V; I
C
= 4 A
V
CB
= 26 V; I
E
= i
e
= 0; f = 1 MHz;
note 1
V
CE
= 26 V; I
C
= 0; f = 1 MHz
65
27
3
45
V
V
V
mA
pF
C
re
feedback capacitance
41
pF
Fig.2
DC current gain as a function of collector
current; typical values.
V
CE
= 10 V.
handbook, halfpage
0
4
2
6
8
10
IC (A)
hFE
0
80
40
MBK396
Fig.3
Feedback capacitance as a function of
collector-base voltage; typical values.
f = 1 MHz.
handbook, halfpage
Cre
(pF)
0
10
20
30
VCB (V)
0
120
80
40
MBK397
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