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參數(shù)資料
| 型號(hào)： | BLV2047 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor(UHF 功率晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 84K |
| 代理商： | BLV2047 |
1999 Jun 09
2
Philips Semiconductors
Product specification
UHF power transistor
BLV2047
FEATURES
Emitter ballasting resistors for optimum
temperature profile
Gold metallization ensures excellent reliability
Internal input and output matching for easy design of
wideband circuits
AlN substrate package for environmental safety.
APPLICATIONS
Common emitter class-AB operation for PCN
(Personal Communication Networks) and
PCS (Personal Communication Services) base station
applications in the 1800 to 2000 MHz frequency range.
DESCRIPTION
NPN silicon planar power transistor in a 2-lead SOT468A
flange package with ceramic cap. The emitter is connected
to the flange.
PINNING - SOT468A
PIN
DESCRIPTION
1
2
3
collector
base
emitter; connected to flange
Fig.1 Simplified outline.
handbook, halfpage
Top view
MBK200
1
3
2
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common emitter test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
MODE OF OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
≥
8.5
≥
9
η
C
(%)
≥
40
≥
33
d
im
(dBc)
≤
30
CW, class-AB
2-tone, class-AB
2000
26
26
60
f
1
= 2000.0; f
2
= 2000.1
60 (PEP)
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
open emitter
open base
open collector
65
27
3
10
270
+150
200
V
V
V
A
W
°
C
°
C
T
mb
= 25
°
C
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