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參數(shù)資料
| 型號： | BLV103 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-171A, 6 PIN |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 89K |
| 代理商： | BLV103 |
March 1993
5
Philips Semiconductors
Product specification
UHF power transistor
BLV103
APPLICATION INFORMATION
RF performance at T
h
= 25
°
C in a common emitter test circuit, R
th mb-h
= 0.4 K/W.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
I
CQ
(mA)
P
L
(W)
G
P
(dB)
η
c
(%)
c.w. class-AB
960
24
5
4
>
11.5
typ. 13
typ. 14
>
45
typ. 48
typ. 50
960
26
5
4
Fig.6
Gain and efficiency as functions of load
power, typical values.
Class-AB operation; I
CQ
= 5 mA
;
f = 960 MHz;
V
CE
= 24 V.
handbook, halfpage
GP
(dB)
MRA359
0
4
8
12
0
20
40
60
80
0
2
4
PL (W)
6
8
η
η
(%)
GP
Ruggedness in class-AB operation
The BLV103 is capable of withstanding a full load
mismatch corresponding to VSWR = 50:1 through all
phases at rated output power under the following
conditions:
V
CE
= 24 V; f = 960 MHz; T
h
= 25
°
C;
R
th mb-h
= 0.4 K/W.
Fig.7
Load power as a function of drive power,
typical values.
Class-AB operation; I
CQ
= 5 mA
;
f = 960 MHz.
handbook, halfpage
PL
(W)
MRA364
0
2
4
6
0
200
400
PIN (mW)
600
800
24 V
VCE = 26 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLV103(1) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF Power Transistors for UHF |
| BLV108 | 制造商:BELLING 制造商全稱:SHANGHAI BELLING CO., LTD. 功能描述:BLV108 |
| BLV11 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLV12 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:VHF power transistor |
| BLV15BE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:WARTUNGSMITTEL BLOC LUBE GRUEN |
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