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參數(shù)資料
| 型號(hào)： | BLV103 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-171A, 6 PIN |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大小： | 89K |
| 代理商： | BLV103 |
March 1993
3
Philips Semiconductors
Product specification
UHF power transistor
BLV103
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature range
junction operating temperature
open emitter
open base
open collector
DC or average value
T
mb
= 25
°
C
65
50
30
4
1.25
17
150
200
V
V
V
A
W
°
C
°
C
Fig.2 DC SOAR.
(1) Second breakdown limit (independent of temperature).
handbook, halfpage
MRA366
0.1
1
1
10
IC
(A)
VCE (V)
10
2
(1)
Tmb = 25
o
C
Th = 70
o
C
Fig.3 Power/temperature derating.
(1) Continuous DC operation.
(2) Continuous RF operation.
(3) Short time operation during mismatch.
handbook, halfpage
Ptot
(W)
MRA365
0
5
10
15
20
0
20
40
60
(3)
(1)
(2)
80
Th (
o
C)
100
120
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
T
mb
= 25
°
C;
P
dis
= 17 W
MAX.
UNIT
R
th j-mb
from junction to mounting base
10.3
K/W
R
th mb-h
from mounting base to heatsink
0.4
K/W
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