- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375401 > BLF900-110 (NXP SEMICONDUCTORS) Base station LDMOS transistors PDF資料下載
參數(shù)資料
| 型號： | BLF900-110 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Base station LDMOS transistors |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-3 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 137K |
| 代理商： | BLF900-110 |
2004 Feb 04
3
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF900-110; BLF900S-110
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1.
Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BLF900-110
BLF900S-110
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
Earless flanged LDMOST ceramic package; 2 leads
SOT502A
SOT502B
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DS
V
GS
T
stg
T
j
drain-source voltage
gate-source voltage
storage temperature
junction temperature
65
75
±
15
+150
200
V
V
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-c)
thermal resistance from junction to case
T
h
= 25
°
C, P
L
= 160 W (AV), note 1
0.9
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
7
90
MAX.
5.5
3
0.5
UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
V
GS
= 0; I
D
= 3 mA
V
DS
= 10 V; I
D
= 250 mA
V
GS
= 0; V
DS
= 28 V
V
GS
= V
GSth
+ 9 V; V
DS
= 10 V
V
GS
=
±
15 V; V
DS
= 0
V
DS
= 20 V; I
D
= 7.5 A
V
GS
= V
GSth
+ 9 V; I
D
= 9 A
75
4.5
31
V
V
μ
A
A
μ
A
S
m
相關PDF資料 |
PDF描述 |
|---|---|
| BLF900S-110 | Base station LDMOS transistors |
| BLT71 | UHF power transistor |
| BLT92 | UHF power transistor |
| BLU60 | UHF power transistor |
| BLU60-12 | UHF power transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BLF900S-110 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Base station LDMOS transistors |
| BLF988,112 | 制造商:NXP Semiconductors 功能描述:BLF988/LDMOST/TUBE-BULK// - Rail/Tube 制造商:NXP Semiconductors 功能描述:TRANS 600W LDMOS SOT539A |
| BLF988S,112 | 制造商:NXP Semiconductors 功能描述:BLF988S/LDMOST/TUBE-BULK// - Rail/Tube 制造商:NXP Semiconductors 功能描述:TRANS 600W LDMOS SOT539B 制造商:NXP Semiconductors 功能描述:BLF988 Series 860 MHz 110 V 20 dB Power LDMOS Transistor - SOT-539B |
| BLF9G20LS-160VJ | 功能描述:TRANS RF LDMOS 160W SOT1120 制造商:ampleon usa inc. 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 晶體管類型:LDMOS 頻率:1.81GHz ~ 1.88GHz 增益:19.8dB 電壓 - 測試:28V 額定電流:- 噪聲系數(shù):- 電流 - 測試:800mA 功率 - 輸出:35.5W 電壓 - 額定:65V 封裝/外殼:SOT-1120B 供應商器件封裝:CDFM6 標準包裝:1 |
| BLF9G20LS-160VU | 功能描述:TRANS RF LDMOS 160W SOT1120 制造商:ampleon usa inc. 系列:- 包裝:散裝 零件狀態(tài):有效 晶體管類型:LDMOS 頻率:1.81GHz ~ 1.88GHz 增益:19.8dB 電壓 - 測試:28V 額定電流:- 噪聲系數(shù):- 電流 - 測試:800mA 功率 - 輸出:35.5W 電壓 - 額定:65V 封裝/外殼:SOT-1120B 供應商器件封裝:CDFM6 標準包裝:20 |
發(fā)布緊急采購，3分鐘左右您將得到回復。