參數(shù)資料
型號: BLF900-110
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Base station LDMOS transistors
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC PACKAGE-3
文件頁數(shù): 2/13頁
文件大小: 137K
代理商: BLF900-110
2004 Feb 04
2
Philips Semiconductors
Product specification
Base station LDMOS transistors
BLF900-110; BLF900S-110
FEATURES
Typical CDMA IS95 performance at standard settings
with a supply voltage of 27 V, frequency of 881.5 MHz
and I
DQ
of 700 mA; adjacent channel bandwidth is
30 kHz, adjacent channel at
±
750 kHz:
– Output power = 24 W (AV)
– Gain = 15 dB
– Efficiency = 27%
– ACPR =
45 dBc at 750 kHz and BW = 30 kHz.
110 W CW performance
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (800 to 1000 MHz)
Internally matched for ease of use.
APPLICATIONS
RF power amplifier for GSM, EDGE and CDMA base
stations and multicarrier operations in the
800 to 1000 MHz frequency range.
DESCRIPTION
110 W LDMOS power transistor for base station
applications at frequencies from 800 to 1000 MHz.
PINNING - SOT502A
PINNING - SOT502B
PIN
DESCRIPTION
1
2
3
drain
gate
source; connected to flange
handbook, halfpage
Top view
MBK394
1
2
3
Fig.1 Simplified outline SOT502A (BLF900-110).
PIN
DESCRIPTION
1
2
3
drain
gate
source; connected to flange
1
Top view
MBL105
2
3
Fig.2 Simplified outline SOT502B (BLF900S-110).
Leads are gold-plated.
QUICK REFERENCE DATA
Typical RF performance at T
h
= 25
°
C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
η
D
(%)
d
3
(dBc)
33
ACPR 750
(dBc)
45
2-tone, class-AB
CDMA (IS95)
f
1
= 890.0; f
2
= 890.1
881.5
27
27
100 (PEP)
24 (AV)
17
15
38
27
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