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參數(shù)資料
| 型號： | BGY212 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | UHF amplifier module |
| 中文描述： | 超高頻放大器模塊 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 132K |
| 代理商： | BGY212 |
1999 Aug 23
5
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
Fig.6
Input VSWR as a function of load power;
typical values.
Z
S
= Z
L
= 50
; V
S
= 3.5 V; P
D
= 0 dBm;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
μ
s
1
2
3
4
0
1
2
3
P
L
(W)
VSWR
IN
1710MHz
1785MHz
Fig.7
Harmonics as a function of
frequency; typical values.
Z
S
= Z
L
= 50
; V
S
= 3.5 V; P
D
= 0 dBm; P
L
= 1.6 W;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
μ
s.
-80
-60
-40
-20
0
1700
1750
1800
f (MHz)
H
2
, H
3
(dBc)
H
2
H
3
Z
S
= Z
L
= 50
; P
D
= 0 dBm; V
C
= 2.2 V;
δ
= 1 : 8; t
p
= 575
μ
s.
(1) V
S
= 3.5 V; f = 1710 MHz.
(2) V
S
= 3.5 V; f = 1785 MHz.
(3) V
S
= 3.2 V; f = 1710 MHz.
(4) V
S
= 3.2 V; f = 1785 MHz.
Fig.8
Load power as a function of mounting
base temperature; typical values.
0
1
2
3
0
20
40
60
80
100
T
mb
(°C)
P
L
(W)
(1)
(4)
(3)
(2)
Fig.9
Output amplitude modulation as a
function of load power; typical values.
Z
S
= Z
L
= 50
; V
S
= 3.5 V; P
D
= 0 dBm; T
mb
= 25
°
C;
f = 100 kHz; input amplitude modulation = 3%;
δ
= 1 : 8; t
p
= 575
μ
s.
0
4
8
12
16
-20
0
20
40
P
L
(dBm)
output
AM
(%)
1785MHz
1710MHz
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