參數(shù)資料
型號: BGY212
廠商: NXP Semiconductors N.V.
英文描述: UHF amplifier module
中文描述: 超高頻放大器模塊
文件頁數(shù): 2/11頁
文件大?。?/td> 132K
代理商: BGY212
1999 Aug 23
2
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
FEATURES
3.5 V nominal supply voltage
2 W output power
Easy output power control by DC voltage.
APPLICATIONS
Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in the
1710 to 1785 MHz frequency range.
DESCRIPTION
The BGY212A is a three-stage UHF amplifier module in a
SOT482C leadless package with a plastic cover. The
module consists of one NPN silicon planar transistor die
and one bipolar monolithic integrated circuit mounted
together with matching and bias circuit components on a
metallized ceramic substrate.
PINNING - SOT482C
PIN
DESCRIPTION
1
2
3
4
5
RF input
V
C
V
S
RF output
ground
Fig.1 Simplified outline
book, halfpage
MBK201
Bottom view
4
3
2
5
1
QUICK REFERENCE DATA
RF performance at T
mb
= 25
°
C.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
MODE OF
OPERATION
f
(MHz)
V
S
(V)
V
C
(V)
P
L
(dBm)
G
p
(dB)
η
(%)
Z
S
, Z
L
(
)
Pulsed;
δ
= 1 : 8
1710 to 1785
3.5
2.2
typ. 33
typ. 33
typ. 40
50
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
S
DC supply voltage
V
C
< 0.2 V; P
D
= 0 mW
V
C
0.2 V
40
30
7
4.1
2.7
10
34.1
+100
+100
V
V
V
dBm
dBm
°
C
°
C
V
C
P
D
P
L
T
stg
T
mb
DC control voltage
input drive power
load power
storage temperature
operating mounting base temperature
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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