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參數(shù)資料
| 型號(hào)： | BFG67XR |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN 8GHz wideband transistor(NPN 8G赫茲 寬帶晶體管) |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 6/16頁(yè) |
| 文件大?。?/td> | 133K |
| 代理商： | BFG67XR |
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1998 Oct 02
6
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
Fig.8 Gain as a function of frequency.
V
CE
= 8 V; I
C
= 5 mA.
G
= maximum unilateral power gain;
MSG = maximum stable gain;
G
max
= maximum available gain.
handbook, halfpage
gain
(dB)
0
10
MBB305
10
2
10
3
10
4
10
20
30
40
f (MHz)
GUM
MSG
Gmax
Fig.9 Gain as a function of frequency.
V
CE
= 8 V; I
C
= 15 mA.
G
= maximum unilateral power gain;
MSG = maximum stable gain;
G
max
= maximum available gain.
handbook, halfpage
(dB)
0
10
MBB306
10
2
10
3
10
4
10
20
30
40
f (MHz)
GUM
MSG
Gmax
Fig.10 Gain as a function of frequency.
V
CE
= 8 V; I
C
= 30 mA.
G
= maximum unilateral power gain;
MSG = maximum stable gain;
G
max
= maximum available gain.
handbook, halfpage
(dB)
0
10
MBB307
10
2
10
3
10
4
10
20
30
40
f (MHz)
GUM
MSG
Gmax
Fig.11 Minimum noise figure as a function of
collector current.
V
CE
= 8 V.
handbook, halfpage
F
(dB)
2
1
0
100
MBB308
10
1
3
IC
f = 2 GHz
1 GHz
900 MHz
500 MHz
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