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參數(shù)資料
| 型號： | BFG67XR |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN 8GHz wideband transistor(NPN 8G赫茲 寬帶晶體管) |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 133K |
| 代理商： | BFG67XR |
1998 Oct 02
2
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in the GHz
range, such as satellite TV tuners and
portable RF communications
equipment.
DESCRIPTION
NPN silicon transistor in a 4-pin,
dual-emitter SOT143B plastic
package. Available with in-line emitter
pinning (BFG67) and cross emitter
pinning (BFG67/X). Version with
reverse pinning (BFG67/XR) also
available on request.
MARKING
TYPE NUMBER
CODE
BFG67 (Fig.1)
BFG67/X (Fig.1)
BFG67/XR (Fig.2)
V3
V12
V26
PINNING
PIN
DESCRIPTION
BFG67
BFG67/X
BFG67/XR
1
2
3
4
collector
base
emitter
emitter
collector
emitter
base
emitter
collector
emitter
base
emitter
Fig.1
Simplified outline
SOT143B.
handbook, 2 columns
Top view
MSB014
1
2
3
Fig.2
Simplified outline
SOT143R.
handbook, 2 columns
Top view
MSB035
1
2
4
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CEO
I
C
P
tot
C
re
f
T
G
UM
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral power
gain
noise figure
open base
0.5
8
17
10
50
300
V
mA
mW
pF
GHz
dB
T
s
≤
65
°
C
I
C
= i
c
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 8 V; f = 500 MHz
I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
°
C; f = 1 GHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
°
C; f = 1 GHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
°
C; f = 2 GHz
F
1.3
dB
2.2
dB
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