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參數(shù)資料
| 型號(hào)： | BFG67XR |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN 8GHz wideband transistor(NPN 8G赫茲 寬帶晶體管) |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 133K |
| 代理商： | BFG67XR |
1998 Oct 02
4
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
h
FE
f
T
C
c
C
e
C
re
G
UM
collector leakage current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power
gain; note 1
V
CB
= 5 V; I
E
= 0
I
C
= 15 mA; V
CE
= 5 V
I
C
= 15 mA; V
CE
= 8 V; f = 500 MHz
I
E
= i
e
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= i
c
= 0; V
CB
= 8 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
°
C; f = 1 GHz
I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
°
C; f = 2 GHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 8 V
T
amb
= 25
°
C; f = 1 GHz
Γ
s
=
Γ
opt
; I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
°
C; f = 1 GHz
I
C
= 5 mA; V
CE
= 8 V;
T
amb
= 25
°
C; f = 2 GHz; Z
S
= 60
I
C
= 15 mA; V
CE
= 8 V;
T
amb
= 25
°
C; f = 2 GHz; Z
S
= 60
60
100
8
0.7
1.3
0.5
17
50
nA
GHz
pF
pF
pF
dB
10
dB
F
noise figure
1.3
dB
1.7
dB
2.5
dB
3
dB
G
UM
10
S
)
1
2
1
S
11
–
(
S
22
2
–
(
)
-------------------------------------------------------------- dB.
log
=
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