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參數(shù)資料
| 型號： | BFG520XR |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | NPN 9GHz wideband transistor(NPN 9G赫茲 寬帶晶體管) |
| 中文描述： | 叩9GHz寬帶晶體管（npn型9G章赫茲寬帶晶體管） |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 146K |
| 代理商： | BFG520XR |
September 1995
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial
transistors, intended for applications
in the RF frontend in the GHz range,
such as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, pagers and satellite TV
tuners (SATV) and repeater
amplifiers in fibre-optic systems.
The transistors are encapsulated in
4-pin, dual-emitter plastic SOT143
and SOT143R envelopes.
PINNING
PIN
DESCRIPTION
BFG520 (Fig.1) Code: N36
1
collector
2
base
3
emitter
4
emitter
BFG520/X (Fig.1) Code: N42
1
collector
2
emitter
3
base
4
emitter
BFG520/XR (Fig.2) Code: N48
1
collector
2
emitter
3
base
4
emitter
Fig.1 SOT143B.
fpage
Top view
MSB014
1
2
3
4
Fig.2 SOT143R.
handbook, 2 columns
Top view
MSB035
1
2
4
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CBO
V
CEO
I
c
P
tot
h
FE
C
re
f
T
collector-base voltage
collector-emitter voltage open base
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
open emitter
60
120
0.3
9
20
15
70
300
250
V
V
mA
mW
up to T
s
= 88
°
C; note 1
I
C
= 20 mA; V
CE
= 6 V; T
j
= 25
°
C
I
C
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 20 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
= 25
°
C
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
°
C
I
C
= 20 mA; V
CE
= 6 V; f = 2 GHz;
T
amb
= 25
°
C
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
°
C
Γ
s
=
Γ
opt
; I
c
= 5 mA; V
CE
= 6 V;
f = 900 MHz; T
amb
= 25
°
C
Γ
s
=
Γ
opt
; I
C
= 20 mA; V
CE
= 6 V;
f = 900 MHz; T
amb
= 25
°
C
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 8 V;
f = 2 GHz; T
amb
= 25
°
C
pF
GHz
G
UM
maximum unilateral
power gain
19
dB
13
dB
S
21
2
insertion power gain
17
18
dB
F
noise figure
1.1
1.6
dB
1.6
2.1
dB
1.9
dB
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| BFG540 T/R | 功能描述:射頻雙極小信號晶體管 TAPE7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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