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    參數(shù)資料
    型號(hào): BCV28
    廠商: ZETEX PLC
    元件分類: 小信號(hào)晶體管
    英文描述: PNP SILICON DARLINGTON TRANSISTOR
    中文描述: 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
    封裝: SOT-89, 3 PIN
    文件頁數(shù): 1/1頁
    文件大?。?/td> 16K
    代理商: BCV28
    SOT89 PNP SILICON
    DARLINGTON TRANSISTOR
    ISSUE 3 – SEPTEMBER 1995
    %
    COMPLEMENTARY TYPE –
    BCV29
    PARTMARKING DETAIL –
    ED
    ABSOLUTE MAXIMUM RATINGS.
    PARAMETER
    SYMBOL
    VALUE
    UNIT
    Collector-Base Voltage
    V
    CBO
    V
    CEO
    V
    EBO
    I
    CM
    I
    C
    P
    tot
    T
    j
    :T
    stg
    -40
    V
    Collector-Emitter Voltage
    -30
    V
    Emitter-Base Voltage
    -10
    V
    Peak Pulse Current
    -800
    mA
    Continuous Collector Current
    -500
    mA
    Power Dissipation at T
    amb
    =25°C
    Operating and Storage Temperature
    Range
    ELECTRICAL CHARACTERISTICS (at T
    amb
    = 25°C unless otherwise stated).
    PARAMETER
    SYMBOL
    MIN.
    1
    W
    -65 to +150
    °C
    TYP.
    MAX .
    UNIT
    CONDITIONS.
    I
    C
    =100
    μ
    A
    Collector-Base
    Breakdown Voltage
    V
    (BR)CBO
    -40
    V
    Collector-Emitter
    Breakdown Voltage
    V
    (BR)CEO
    -30
    V
    I
    C
    =10mA*
    Emitter-Base
    Breakdown Voltage
    V
    (BR)EBO
    -10
    V
    I
    E
    =10
    μ
    A
    Collector Cut-Off
    Current
    I
    CBO
    -100
    -10
    nA
    μ
    A
    nA
    V
    CB
    =-30V
    V
    CB
    =-30V, T
    amb
    =150°C
    V
    EB
    =-4V
    I
    C
    =-100mA, I
    B
    =-0.1mA*
    Emitter Cut-Off Current I
    EBO
    Collector-Emitter
    S aturation Voltage
    -100
    V
    CE(sat)
    -1
    V
    Base-Emitter
    S aturation Voltage
    V
    BE(sat)
    -1.5
    V
    I
    C
    =-100mA, I
    B
    =-0.1mA*
    S tatic Forward Current
    Transfer Ratio
    h
    FE
    4000
    10000
    20000
    4000
    I
    C
    =-100
    μ
    A, V
    CE
    =-1V
    I
    C
    =-10mA, V
    CE
    =-5V*
    I
    C
    =-100mA, V
    CE
    =-5V*
    I
    C
    =-0.5mA, V
    CE
    =-5V*
    I
    =-50mA, V
    CE
    =-5V
    f = 20MHz
    Transition Frequency
    f
    T
    200
    MHz
    Output Capacitance
    C
    obo
    4.5
    pF
    V
    CB
    =-10V, f=1MHz
    *Measured under pulsed conditions. Pulse width=300
    μ
    s. Duty cycle
    2%
    Periodic Sample Test Only.
    BCV28
    C
    C
    B
    E
    SOT89
    3 - 23
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