參數(shù)資料
型號: BCV29
廠商: ZETEX PLC
元件分類: 小信號晶體管
英文描述: NPN SILICON PLANAR DARLINGTON TRANSISTOR
中文描述: 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: SOT-89, 3 PIN
文件頁數(shù): 1/1頁
文件大小: 16K
代理商: BCV29
SOT89 NPN SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 4 – J ANUARY 1996
COMPLEMENTARY TYPE –
BCV28
PARTMARKING DETAIL –
EF
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
40
V
Collector-Emitter Voltage
30
V
Emitter-Base Voltage
10
V
Peak Pulse Current
800
mA
Continuous Collector Current
500
mA
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
1
W
-65 to +150
°C
TYP.
MAX .
UNIT
CONDITIONS .
I
C
=100
μ
A
Collector-Base
Breakdown Voltage
V
(BR)CBO
40
V
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
30
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10
V
I
E
=10
μ
A
Collector Cut-Off
Current
I
CBO
100
10
nA
μ
A
nA
V
CB
=30V
V
CB
=30V, T
amb
=150°C
V
EB
=4V
I
C
=100mA, I
B
-0.1mA*
Emitter Cut-Off Current I
EBO
Collector-Emitter
S aturation Voltage
100
V
CE(sat)
1
V
Base-Emitter
S aturation Voltage
V
BE(sat)
1.5
V
I
C
=100mA, I
B
=0.1mA*
S tatic Forward Current
Transfer Ratio
h
FE
4000
10000
20000
4000
I
C
=100
μ
A, V
CE
=1V
I
C
=10mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
=50mA, V
CE
=5V
f = 20MHz
Transition Frequency
f
T
150
MHz
Output Capacitance
C
obo
3.5
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
2%
For typical graphs see FMMT38A datasheet Periodic Sample Test Only.
Spice parameter data is available upon request for this device
BCV29
C
C
B
E
SOT89
3 - 24
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