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參數(shù)資料
| 型號(hào)： | BCM856DS |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP-PNP matched double transistors |
| 中文描述： | PNP-PNP 匹配雙晶體管 |
| 封裝： | BCM856BS<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;BCM856DS<SOT457 (TSOP6)|<<http://www.nxp.com/packages/SOT457.html<1<Always Pb-f |
| 文件頁數(shù)： | 4/14頁 |
| 文件大小： | 104K |
| 代理商： | BCM856DS |
BCM856BS_BCM856DS_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 August 2008
4 of 14
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7.
Characteristics
Table 7.
Symbol Parameter
Per transistor
R
th(j-a)
thermal resistance from junction to
ambient
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
Per device
R
th(j-a)
thermal resistance from junction to
ambient
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
Thermal characteristics
Conditions
Min
Typ
Max
Unit
in free air
[1]
-
-
625
K/W
[1]
-
-
500
K/W
in free air
[1]
-
-
416
K/W
[1]
-
-
328
K/W
Table 8.
T
amb
= 25
°
C unless otherwise specified.
Symbol
Parameter
Per transistor
I
CBO
collector-base cut-off
current
Characteristics
Conditions
Min
Typ
Max
Unit
V
CB
=
30 V;
I
E
= 0 A
V
CB
=
30 V;
I
E
= 0 A;
T
j
= 150
°
C
V
EB
=
5 V;
I
C
= 0 A
V
CE
=
5 V;
I
C
=
10
μ
A
V
CE
=
5 V;
I
C
=
2 mA
I
C
=
10 mA;
I
B
=
0.5 mA
I
C
=
100 mA;
I
B
=
5 mA
I
C
=
10 mA;
I
B
=
0.5 mA
I
C
=
100 mA;
I
B
=
5 mA
-
-
15
nA
-
-
5
μ
A
I
EBO
emitter-base cut-off
current
DC current gain
-
-
100
nA
h
FE
-
250
-
200
290
450
V
CEsat
collector-emitter
saturation voltage
-
50
200
mV
-
200
400
mV
V
BEsat
base-emitter saturation
voltage
[1]
-
760
-
mV
[1]
-
920
-
mV
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BCM856DS,115 | 功能描述:兩極晶體管 - BJT COMPLEX DISCRETE S2023D/SOT45 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCM856DS/DG | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP/PNP matched double transistors |
| BCM856S | 制造商:Infineon Technologies AG 功能描述:Transistor Array PNP AF 65V 100mA SOT363 |
| BCM856S_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon AF Transistor Array |
| BCM856SE6327BTSA1 | 制造商:Infineon Technologies AG 功能描述:TRANS ARR 2PNP 65V 100MA SOT363 |
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