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參數(shù)資料
| 型號(hào)： | BCM856DS |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP-PNP matched double transistors |
| 中文描述： | PNP-PNP 匹配雙晶體管 |
| 封裝： | BCM856BS<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;BCM856DS<SOT457 (TSOP6)|<<http://www.nxp.com/packages/SOT457.html<1<Always Pb-f |
| 文件頁(yè)數(shù)： | 3/14頁(yè) |
| 文件大?。?/td> | 104K |
| 代理商： | BCM856DS |
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BCM856BS_BCM856DS_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 August 2008
3 of 14
NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
4.
Marking
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5.
Limiting values
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 5.
Type number
BCM856BS
BCM856BS/DG
BCM856DS
BCM856DS/DG
Marking codes
Marking code
[1]
*BS
PB*
DS
R9
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Per transistor
V
CBO
collector-base voltage
V
CEO
collector-emitter voltage
V
EBO
emitter-base voltage
I
C
collector current
I
CM
peak collector current
Limiting values
Conditions
Min
Max
Unit
open emitter
open base
open collector
-
-
-
-
-
80
65
5
100
200
V
V
V
mA
mA
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°
C
P
tot
total power dissipation
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
[1]
-
200
mW
[1]
-
250
mW
Per device
P
tot
total power dissipation
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
junction temperature
ambient temperature
storage temperature
T
amb
≤
25
°
C
[1]
-
300
mW
[1]
-
380
mW
T
j
T
amb
T
stg
-
55
65
150
+150
+150
°
C
°
C
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BCM856DS,115 | 功能描述:兩極晶體管 - BJT COMPLEX DISCRETE S2023D/SOT45 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCM856DS/DG | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP/PNP matched double transistors |
| BCM856S | 制造商:Infineon Technologies AG 功能描述:Transistor Array PNP AF 65V 100mA SOT363 |
| BCM856S_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon AF Transistor Array |
| BCM856SE6327BTSA1 | 制造商:Infineon Technologies AG 功能描述:TRANS ARR 2PNP 65V 100MA SOT363 |
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