參數資料
型號： BAX12
廠商： NXP SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： Controlled avalanche diode
中文描述： 0.4 A, 90 V, SILICON, SIGNAL DIODE, DO-35
封裝： PLASTIC, SC-40, 2 PIN
文件頁數： 6/8頁
文件大?。?/td> 39K
代理商： BAX12
1996 Sep 17
6
Philips Semiconductors
Product specification
Controlled avalanche diode
BAX12
Fig.8
Reverse current as a function of continuous
reverse voltage.
handbook, halfpage
100
200
0
200
400
MBG698
150
(1)
(4)
IR
(mA)
VR (V)
(2)
(3)
Reverse voltages higher than the V
R
ratings are allowed, provided:
a. The transient energy
≤
7.5 mJ at P
RRM
≤
30 W; T
j
= 25
°
C;
the transient energy
≤
5 mJ at P
RRM
= 120 W; T
j
= 25
°
C (see Fig.7).
b. T
≥
50 ms;
δ ≤
0.01 (rectangular waveform) (see Fig.9).
δ ≤
0.02 (triangular waveform) (see Fig.9).
With increasing temperature, the maximum permissible transient
energy must be decreased by 0.03 mJ/K.
(1) T
j
= 25
°
C; minimum values.
(2) T
j
= 175
°
C; minimum values.
(3) T
j
= 25
°
C; maximum values.
(4) T
j
= 175
°
C; maximum values.
Fig.9
Peak reverse voltage and current test
pulses.
handbook, halfpage
MBG699
IR
T
time
time
t (rectangular waveform)
t
(triangular
waveform)
δ
=t
T
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