參數(shù)資料
型號： BAX12
廠商： NXP SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： Controlled avalanche diode
中文描述： 0.4 A, 90 V, SILICON, SIGNAL DIODE, DO-35
封裝： PLASTIC, SC-40, 2 PIN
文件頁數(shù)： 3/8頁
文件大?。?/td> 39K
代理商： BAX12
1996 Sep 17
3
Philips Semiconductors
Product specification
Controlled avalanche diode
BAX12
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed circuit-board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 200 mA
I
F
= 400 mA
see Fig.5
V
R
= 90 V
V
R
= 90 V; T
j
= 150
°
C
I
R
= 1 mA
f = 1 MHz; V
R
= 0;
see Fig.6
when switched from
I
F
= 30 mA to I
R
= 30 mA;
R
L
= 100
; measured at
I
R
= 3 mA; see Fig.10
750
840
900
mV
mV
mV
V
V
1.0
1.25
I
R
reverse current
100
100
170
35
nA
μ
A
V
pF
V
(BR)R
C
d
reverse avalanche breakdown voltage
diode capacitance
120
t
rr
reverse recovery time
50
ns
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length 10 mm
lead length 10 mm; note 1
240
375
K/W
K/W
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