參數(shù)資料
型號(hào): BAX12
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Controlled avalanche diode
中文描述: 0.4 A, 90 V, SILICON, SIGNAL DIODE, DO-35
封裝: PLASTIC, SC-40, 2 PIN
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 39K
代理商: BAX12
1996 Sep 17
2
Philips Semiconductors
Product specification
Controlled avalanche diode
BAX12
FEATURES
Hermetically sealed leaded glass
SOD27 (DO-35) package
Switching speed: max. 50 ns
General application
Continuous reverse voltage:
max. 90 V
Repetitive peak reverse voltage:
max. 90 V
Repetitive peak forward current:
max. 800 mA
Repetitive peak reverse current:
max. 600 mA
Capable of absorbing transients
repetitively.
APPLICATIONS
Switching of inductive loads in
semi-electronic telephone
exchanges.
DESCRIPTION
The BAX12 is a controlled avalanche diode fabricated in planar technology, and
encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
Fig.1 Simplified outline (SOD27; DO35) and symbol.
Marking code
: BAX12.
handbook, halfpage
MAM246
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
It is allowed to exceed this value; see Figs 8 and 9. Care should be taken not to exceed the I
RRM
rating.
Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
V
R
I
F
I
FRM
I
FSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
note 1
note 1
see Fig.2; note 2
90
90
V
V
mA
mA
400
800
square wave; T
j
= 25
°
C prior to
surge; see Fig.4
t = 1
μ
s
t = 100
μ
s
t = 10 ms
T
amb
= 25
°
C; note 2
55
15
A
A
A
mW
mA
mJ
°
C
°
C
9
P
tot
I
RRM
E
RRM
T
stg
T
j
total power dissipation
repetitive peak reverse current
repetitive peak reverse energy
storage temperature
junction temperature
450
600
t
p
50
μ
s; f
20 Hz; T
j
= 25
°
C
5.0
65
+200
200
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