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參數(shù)資料
| 型號(hào)： | ATF-10100 |
| 英文描述： | 0.5-12 GHz Low Noise Gallium Arsenide FET |
| 中文描述： | 0.5-12 GHz的低噪聲砷化鎵場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 51K |
| 代理商： | ATF-10100 |
5-20
ATF-10100 Absolute Maximum Ratings
Absolute
Maximum
[1]
+5
-4
-7
I
DSS
430
175
-65 to +175
Symbol
V
DS
V
GS
V
GD
I
DS
P
T
T
CH
T
STG
Parameter
Units
V
V
V
mA
mW
°
C
°
C
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation
[2,3]
Channel Temperature
Storage Temperature
[4]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE
TEMPERATURE
= 25
°
C.
3. Derate at 4.4 mW/
°
C for
T
CASE
> 78
°
C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
θ
jc
than do alternate methods. See
APPLICATIONS PRIMER IIIA for
more information.
ATF-10100 Typical Performance, T
A
= 25
°
C
Part Number Ordering Information
Part Number
ATF-10100-GP3
Devices Per Tray
50
Thermal Resistance:
Liquid Crystal Measurement:
θ
jc
= 225
°
C/W; T
CH
= 150
°
C
1
μ
m Spot Size
[4]
ATF-10100 Noise Parameters:
V
DS
= 2 V, I
DS
= 25 mA
Freq.
NF
O
GHz
dB
Γ
opt
Mag
0.78
0.55
0.39
0.41
0.46
Ang
13
27
65
105
144
R
N
/50
1.0
2.0
4.0
6.0
8.0
0.4
0.4
0.55
0.8
1.0
0.40
0.29
0.22
0.16
0.10
I
DS
(mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. I
DS
.
V
DS
= 2V, f = 4.0 GHz.
N
O
0
10
20
30
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
DS
= 2 V, I
DS
= 25 mA.
FREQUENCY (GHz)
G
16
14
12
10
G
A
1.5
1.0
0.5
0
G
A
NF
O
|S
21
|
2
MSG
MAG
1.0
2.0
4.0
6.0
8.0 10.012.0
30
20
10
0
Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
DS
= 4 V, I
DS
= 70 mA.
FREQUENCY (GHz)
G
|S
21
|
2
MSG
MAG
1.0
2.0
4.0
6.0
8.0 10.012.0
30
20
10
0
FREQUENCY (GHz)
N
O
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
V
DS
= 2V, I
DS
= 25 mA, T
A
= 25
°
C.
2.0
1.5
1.0
0.5
0
18
15
12
9
6
G
A
2.0
6.0
4.0
8.0 10.0 12.0
G
A
NF
O
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-10100-GP3 | 0.5-12 GHz Low Noise Gallium Arsenide FET |
| ATF-21170 | 0.5-6 GHz Low Noise Gallium Arsenide FET |
| ATF-21186 | 0.5-6 GHz General Purpose Gallium Arsenide FET |
| ATF-21186-STR | 0.5-6 GHz General Purpose Gallium Arsenide FET |
| ATF-21186-TR1 | 0.5-6 GHz General Purpose Gallium Arsenide FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-10100-GP3 | 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:0.5-12 GHz Low Noise Gallium Arsenide FET |
| ATF10135 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | SOT-173VAR |
| ATF10136 | 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:0.5-12 GHz Low Noise Gallium Arsenide FET |
| ATF-10136 | 制造商:Agilent Technologies 功能描述: 制造商:AGILNT 功能描述: |
| ATF-10136-STR | 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:0.5-12 GHz Low Noise Gallium Arsenide FET |
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