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參數(shù)資料
| 型號(hào)： | ATF-21186-TR1 |
| 英文描述： | 0.5-6 GHz General Purpose Gallium Arsenide FET |
| 中文描述： | 0.5-6 GHz的通用砷化鎵場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 75K |
| 代理商： | ATF-21186-TR1 |
5-49
Description
Hewlett–Packard’s ATF-21186 is a
low cost Gallium Arsenide
Schottky barrier-gate field effect
transistor housed in a surface
mount plastic package. This
general purpose device is
designed for use in low noise
amplifiers, gain stages, driver
amplifiers, and oscillators
operating over the VHF, UHF, and
microwave frequency ranges.
High gain with two volt operation
makes this part attractive for low
voltage, battery operated systems.
The low noise figure is
appropriate for commercial
systems demanding good
sensitivity, such as GPS receiver
front-ends and MMDS television
receivers. The output power is
sufficient for use as the driver
stage in many hand-held
transceivers operating in the
900MHz through 2.4 GHz bands,
including in cellular phones, PCN,
and ISM band spread spectrum
applications.
0.5–6 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-21186
Features
Low Noise Figure:
0.5 dB Typ. @ 2 GHz
High Output Power:
19 dBm Typ. P
1dB
@ 2 GHz
High MSG:
13.5 dB Typ. @ 2 GHz
Low Cost Surface Mount
Plastic Package
Tape-and-Reel Packaging
Option Available
[1]
Note:
1. Refer to “Tape-and-Reel Packaging for
Surface Mount Semiconductors”.
ATF-21186 Insertion Power Gain,
Maximum Available Gain, and
Maximum Stable Gain vs. Frequency.
V
DS
= 2 V, I
DS
= 15 mA.
85 mil Plastic Surface
Mount Package
Pin Configuration
G
0
0.1
FREQUENCY (GHz)
30
10
1
10
20
MSG
S
MAG
21
1
4
3
2
SOURCE
SOURCE
DRAIN
GATE
2
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 750 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
5965-8716E
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相關(guān)代理商/技術(shù)參數(shù) |
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| ATF22LV10C | 制造商:ATMEL 制造商全稱(chēng):ATMEL Corporation 功能描述:High-performance Electrically Erasable Programmable Logic Device |
| ATF22LV10C-10JC | 功能描述:SPLD - 簡(jiǎn)單可編程邏輯器件 500 GATE STANDARD POWER 3.3V - 10NS RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池?cái)?shù)量:10 最大工作頻率:66 MHz 延遲時(shí)間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:DIP-24 |
| ATF22LV10C-10JI | 功能描述:SPLD - 簡(jiǎn)單可編程邏輯器件 EEPLD 500GATE STDPWR 3.3V 10NS IND TEMP RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池?cái)?shù)量:10 最大工作頻率:66 MHz 延遲時(shí)間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:DIP-24 |
| ATF22LV10C-10JU | 功能描述:SPLD - 簡(jiǎn)單可編程邏輯器件 500 GATE STANDARD POWER 3.3V - 10NS RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池?cái)?shù)量:10 最大工作頻率:66 MHz 延遲時(shí)間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:DIP-24 |
| ATF22LV10C-10PC | 功能描述:SPLD - 簡(jiǎn)單可編程邏輯器件 500 GATE STANDARD POWER 3.3V - 10NS RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池?cái)?shù)量:10 最大工作頻率:66 MHz 延遲時(shí)間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:DIP-24 |
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