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參數(shù)資料
| 型號(hào)： | ATF-21170 |
| 英文描述： | 0.5-6 GHz Low Noise Gallium Arsenide FET |
| 中文描述： | 0.5-6 GHz的低噪聲砷化鎵場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | ATF-21170 |
5-46
0.5–6 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-21170
70 mil Package
Description
The ATF-21170 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
Features
Low Noise Figure:
0.9 dB Typical at 4GHz
High Associated Gain:
13.0dB Typical at 4GHz
High Output Power:
23.0dBm Typical P
1 dB
at 4GHz
Hermetic Gold-Ceramic
Microstrip Package
Electrical Specifications, T
A
= 25
°
C
Symbol
NF
O
Optimum Noise Figure: V
DS
= 3 V, I
DS
= 20 mA
Parameters and Test Conditions
Units Min.
dB
dB
dB
dB
dB
dB
dBm
Typ. Max.
0.6
0.9
1.2
16.0
13.0
10.0
23.0
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
f = 4.0 GHz
1.1
G
A
Gain @ NF
O
: V
DS
= 3 V, I
DS
= 20 mA
12.0
P
1 dB
Power Output @ 1 dB Gain Compression:
V
DS
=5 V, I
DS
= 80 mA
1 dB Compressed Gain: V
DS
= 5 V, I
DS
= 80 mA
Transconductance: V
DS
=3 V, V
GS
= 0 V
Saturated Drain Current: V
DS
= 3 V, V
GS
= 0 V
Pinch-off Voltage: V
DS
= 3 V, I
DS
= 1 mA
G
1 dB
g
m
I
DSS
V
P
f = 4.0 GHz
dB
13.0
120
120
-1.5
mmho
mA
V
70
80
-3.0
200
-0.8
housed in a hermetic, high
reliability package. This device is
designed for use in low noise or
medium power amplifier applica-
tions in the 0.5-6 GHz frequency
range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
750microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
5965-8718E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-21186 | 0.5-6 GHz General Purpose Gallium Arsenide FET |
| ATF-21186-STR | 0.5-6 GHz General Purpose Gallium Arsenide FET |
| ATF-21186-TR1 | 0.5-6 GHz General Purpose Gallium Arsenide FET |
| ATF-25170 | 0.5-10 GHz Low Noise Gallium Arsenide FET |
| ATF-25570 | 0.5-10 GHz General Purpose Gallium Arsenide FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-21186 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5-6 GHz General Purpose Gallium Arsenide FET |
| ATF-21186-STR | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5-6 GHz General Purpose Gallium Arsenide FET |
| ATF-21186-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:0.5-6 GHz General Purpose Gallium Arsenide FET |
| ATF22LV10C | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:High-performance Electrically Erasable Programmable Logic Device |
| ATF22LV10C-10JC | 功能描述:SPLD - 簡(jiǎn)單可編程邏輯器件 500 GATE STANDARD POWER 3.3V - 10NS RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池?cái)?shù)量:10 最大工作頻率:66 MHz 延遲時(shí)間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:DIP-24 |
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