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參數(shù)資料
| 型號(hào)： | AT29C432 |
| 廠商： | Atmel Corp. |
| 英文描述： | 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-TSSOP -55 to 125 |
| 中文描述： | 4兆位5伏具有256k E2PROM的閃存記憶 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 314K |
| 代理商： | AT29C432 |
4 Megabit
5-volt Flash with
256K E
2
PROM
Memory
AT29C432
ConcurrentFlash
Preliminary
Features
ConcurrentFlash
Unique Architecture Allows the Flash Array
To Be Read During the E
2
PROM Write Cycle
4 Megabit 5-volt Flash
Configured as a 512K x 8 Memory Array
120 ns Read Access Time
Sector Program Operation
Single Cycle Reprogram (No Erase Necessary)
2048 Sectors, 256-Bytes Wide
10 ms Sector Rewrite
JEDEC Standard Software Data Protection
256K bit Full Feature E
2
PROM
Configured as a 32K x 8 Memory Array
Byte or Page (16 bytes) Write Capability
Write Cycle Time: 10 ms
JEDEC Standard Software Data Protection
Pinout Similar to 32-Pin 4 Mb Flash
Data Memory Endurance: 10,000 cycles
Memory
Pin Configurations
Pin Name
Function
A0 - A18
Addresses
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
Chip Enable E
2
PROM
CEE
CEF
Chip Enable Flash
NC
No Connect
TSOP
Type 1
Description
The AT29C432 is a CMOS memory specifically designed for applications requiring
both a high density nonvolatile program memory and a smaller nonvolatile data mem-
ory. The AT29C432 provides this in the form of a 4 megabit Flash array integrated
with a 256K bit full featured E
2
PROM array on the same device. A unique feature of
this device is its concurrent read while writing capability. This provides the host sys-
tem read access to the Flash program memory during the write cycle time of the
E
2
PROM.
The two memory arrays share all I/O lines, Address lines and OE and WE inputs.
Each memory array has its own Chip Enable input: CEF for the Flash array and CEE
for the E
2
PROM array.
Additionally, Software Data Protection has been independently implemented for both
arrays and is always enabled. The AT29C432 has a pinout similar to the AT29C040A
Flash memory. A system designer using a Flash memory for program storage and
another smaller, non volatile memory for data storage can easily replace both memo-
ries with the AT29C432.
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PDF描述 |
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| AT29C512 | Anti-Static Storage Bags; External Height:12"; External Width:10"; Features:Zipper closure allows access to the bag contents without using labels; Material:Polyester/Metal/Polyethylene RoHS Compliant: Yes |
| AT29C512-12JC | Anti-Static Storage Bags; External Height:14"; External Width:10"; Features:Zipper closure allows access to the bag contents without using labels; Material:Polyester/Metal/Polyethylene RoHS Compliant: Yes |
| AT29C512-70 | 512K 64K x 8 5-volt Only CMOS Flash Memory |
| AT29C512-90 | 512K 64K x 8 5-volt Only CMOS Flash Memory |
| AT29C512-12 | 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-TSSOP -55 to 125 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT29C432-12 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:4 Megabit 5-volt Flash with 256K E2PROM Memory |
| AT29C432-12TC | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:4 Megabit 5-volt Flash with 256K E2PROM Memory |
| AT29C432-12TI | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:4 Megabit 5-volt Flash with 256K E2PROM Memory |
| AT29C432-15 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:4 Megabit 5-volt Flash with 256K E2PROM Memory |
| AT29C432-15TC | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:4 Megabit 5-volt Flash with 256K E2PROM Memory |
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