參數(shù)資料
型號(hào): AT29C512
廠商: Atmel Corp.
英文描述: Anti-Static Storage Bags; External Height:12"; External Width:10"; Features:Zipper closure allows access to the bag contents without using labels; Material:Polyester/Metal/Polyethylene RoHS Compliant: Yes
中文描述: 為512k 64KX8的5伏只有閃存的CMOS
文件頁(yè)數(shù): 1/18頁(yè)
文件大小: 284K
代理商: AT29C512
Features
Fast Read Access Time – 70 ns
5-volt Only Reprogramming
Sector Program Operation
– Single Cycle Reprogram (Erase and Program)
– 512 Sectors (128 Bytes/Sector)
– Internal Address and Data Latches for 128 Bytes
Internal Program Control and Timer
Hardware and Software Data Protection
Fast Sector Program Cycle Time – 10 ms
DATA Polling for End of Program Detection
Low Power Dissipation
– 50 mA Active Current
– 100 μA CMOS Standby Current
Typical Endurance > 10,000 Cycles
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option
1.
The AT29C512 is a 5-volt only in-system Flash programmable and erasable read only
memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Man-
ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 70 ns with power dissipation of just 275 mW over the commercial tem-
perature range. When the device is deselected, the CMOS standby current is less
than 100
μA. The device endurance is such that any sector can typically be written to
in excess of 10,000 times.
Description
To allow for simple in-system reprogrammability, the AT29C512 does not require high
input voltages for programming. Five-volt-only commands determine the operation of
the device. Reading data out of the device is similar to reading from an EPROM.
Reprogramming the AT29C512 is performed on a sector basis; 128 bytes of data are
loaded into the device and then simultaneously programmed.
During a reprogram cycle, the address locations and 128 bytes of data are internally
latched, freeing the address and data bus for other operations. Following the initiation
of a program cycle, the device will automatically erase the sector and then program
the latched data using an internal control timer. The end of a program cycle can be
detected by DATA polling of I/O7. Once the end of a program cycle has been
detected, a new access for a read or program can begin.
512K (64K x 8)
5-volt Only
Flash Memory
AT29C512
0456H–FLASH–2/05
相關(guān)PDF資料
PDF描述
AT29C512-12JC Anti-Static Storage Bags; External Height:14"; External Width:10"; Features:Zipper closure allows access to the bag contents without using labels; Material:Polyester/Metal/Polyethylene RoHS Compliant: Yes
AT29C512-70 512K 64K x 8 5-volt Only CMOS Flash Memory
AT29C512-90 512K 64K x 8 5-volt Only CMOS Flash Memory
AT29C512-12 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-TSSOP -55 to 125
AT29C512-70PC High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-SOIC -55 to 125
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AT29C512_08 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:512K (64K x 8) 5-volt Only Flash Memory
AT29C512-12 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:512K 64K x 8 5-volt Only CMOS Flash Memory
AT29C512-12DC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
AT29C512-12DI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
AT29C512-12DM 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM