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參數(shù)資料
| 型號(hào)： | AT29C512-12 |
| 廠商： | Atmel Corp. |
| 英文描述： | 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-TSSOP -55 to 125 |
| 中文描述： | 為512k 64KX8的5伏只有閃存的CMOS |
| 文件頁數(shù)： | 1/18頁 |
| 文件大?。?/td> | 284K |
| 代理商： | AT29C512-12 |
Features
Fast Read Access Time – 70 ns
5-volt Only Reprogramming
Sector Program Operation
– Single Cycle Reprogram (Erase and Program)
– 512 Sectors (128 Bytes/Sector)
– Internal Address and Data Latches for 128 Bytes
Internal Program Control and Timer
Hardware and Software Data Protection
Fast Sector Program Cycle Time – 10 ms
DATA Polling for End of Program Detection
Low Power Dissipation
– 50 mA Active Current
– 100 μA CMOS Standby Current
Typical Endurance > 10,000 Cycles
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option
1.
The AT29C512 is a 5-volt only in-system Flash programmable and erasable read only
memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Man-
ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 70 ns with power dissipation of just 275 mW over the commercial tem-
perature range. When the device is deselected, the CMOS standby current is less
than 100
μA. The device endurance is such that any sector can typically be written to
in excess of 10,000 times.
Description
To allow for simple in-system reprogrammability, the AT29C512 does not require high
input voltages for programming. Five-volt-only commands determine the operation of
the device. Reading data out of the device is similar to reading from an EPROM.
Reprogramming the AT29C512 is performed on a sector basis; 128 bytes of data are
loaded into the device and then simultaneously programmed.
During a reprogram cycle, the address locations and 128 bytes of data are internally
latched, freeing the address and data bus for other operations. Following the initiation
of a program cycle, the device will automatically erase the sector and then program
the latched data using an internal control timer. The end of a program cycle can be
detected by DATA polling of I/O7. Once the end of a program cycle has been
detected, a new access for a read or program can begin.
512K (64K x 8)
5-volt Only
Flash Memory
AT29C512
0456H–FLASH–2/05
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT29C512-70PC | High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-SOIC -55 to 125 |
| AT29C512-70TC | High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-SOIC -55 to 125 |
| AT29C512-70TI | High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-SOIC -55 to 125 |
| AT29C512-70TU | High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-SOIC -55 to 125 |
| AT29C512-90JC | High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-SOIC -55 to 125 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT29C512-12DC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AT29C512-12DI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AT29C512-12DM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AT29C512-12DM/883 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM |
| AT29C512-12JC | 功能描述:閃存 512k (64kx8) NRND RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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