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參數(shù)資料
| 型號： | AT29C512-70 |
| 廠商： | Atmel Corp. |
| 英文描述： | 512K 64K x 8 5-volt Only CMOS Flash Memory |
| 中文描述： | 為512k 64KX8的5伏只有閃存的CMOS |
| 文件頁數(shù)： | 1/18頁 |
| 文件大?。?/td> | 284K |
| 代理商： | AT29C512-70 |
Features
Fast Read Access Time – 70 ns
5-volt Only Reprogramming
Sector Program Operation
– Single Cycle Reprogram (Erase and Program)
– 512 Sectors (128 Bytes/Sector)
– Internal Address and Data Latches for 128 Bytes
Internal Program Control and Timer
Hardware and Software Data Protection
Fast Sector Program Cycle Time – 10 ms
DATA Polling for End of Program Detection
Low Power Dissipation
– 50 mA Active Current
– 100 μA CMOS Standby Current
Typical Endurance > 10,000 Cycles
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option
1.
The AT29C512 is a 5-volt only in-system Flash programmable and erasable read only
memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Man-
ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 70 ns with power dissipation of just 275 mW over the commercial tem-
perature range. When the device is deselected, the CMOS standby current is less
than 100
μA. The device endurance is such that any sector can typically be written to
in excess of 10,000 times.
Description
To allow for simple in-system reprogrammability, the AT29C512 does not require high
input voltages for programming. Five-volt-only commands determine the operation of
the device. Reading data out of the device is similar to reading from an EPROM.
Reprogramming the AT29C512 is performed on a sector basis; 128 bytes of data are
loaded into the device and then simultaneously programmed.
During a reprogram cycle, the address locations and 128 bytes of data are internally
latched, freeing the address and data bus for other operations. Following the initiation
of a program cycle, the device will automatically erase the sector and then program
the latched data using an internal control timer. The end of a program cycle can be
detected by DATA polling of I/O7. Once the end of a program cycle has been
detected, a new access for a read or program can begin.
512K (64K x 8)
5-volt Only
Flash Memory
AT29C512
0456H–FLASH–2/05
相關PDF資料 |
PDF描述 |
|---|---|
| AT29C512-90 | 512K 64K x 8 5-volt Only CMOS Flash Memory |
| AT29C512-12 | 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-TSSOP -55 to 125 |
| AT29C512-70PC | High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-SOIC -55 to 125 |
| AT29C512-70TC | High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-SOIC -55 to 125 |
| AT29C512-70TI | High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Reset 14-SOIC -55 to 125 |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT29C512-70JC | 功能描述:閃存 512K(64Kx8) 5V ONLY 70NS COM TEMP RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT29C512-70JI | 功能描述:閃存 512K(64Kx8) 5V ONLY 70NS IND TEMP RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT29C512-70JU | 功能描述:閃存 64K x 8 70 ns 4.5V-5.5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AT29C512-70JU-T | 功能描述:IC FLASH 512KBIT 70NS 32PLCC 制造商:microchip technology 系列:- 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) 存儲器類型:非易失 存儲器格式:閃存 技術(shù):FLASH 存儲容量:512Kb （64K x 8） 寫周期時間 - 字，頁:10ms 訪問時間:70ns 存儲器接口:并聯(lián) 電壓 - 電源:4.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C（TC） 安裝類型:表面貼裝 封裝/外殼:32-LCC（J 形引線） 供應商器件封裝:32-PLCC 基本零件編號:AT29C512 標準包裝:750 |
| AT29C512-70PC | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:512K 64K x 8 5-volt Only CMOS Flash Memory |
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