參數(shù)資料
型號: AT-41532-TR1
英文描述: NPN SILICON TRANSISTOR
中文描述: NPN硅晶體管
文件頁數(shù): 8/14頁
文件大?。?/td> 146K
代理商: AT-41532-TR1
AT-41532 Typical Scattering Parameters,
Common Emitter,
Z
O
= 50
, V
CE
= 5 V, I
C
= 2 mA
Freq.
S
11
S
21
GHz
Mag
Ang
dB
Mag
0.5
0.659
-79
13.43
4.696
0.75
0.540
-108
11.41
3.720
1.0
0.456
-131
9.64
3.034
1.5
0.387
-169
6.81
2.190
2.0
0.371
162
4.74
1.726
3.0
0.387
116
1.91
1.247
4.0
0.428
79
0.01
1.001
5.0
0.472
49
-1.31
0.860
6.0
0.494
28
-1.96
0.798
7.0
0.490
13
-1.95
0.799
8.0
0.489
2
-1.81
0.812
9.0
0.506
-10
-1.84
0.810
10.0
0.541
-22
-2.07
0.788
11.0
0.634
-33
-2.46
0.754
12.0
0.670
-39
-3.23
0.689
S
12
Mag
0.055
0.065
0.070
0.082
0.104
0.191
0.320
0.475
0.627
0.762
0.840
0.863
0.841
0.786
0.729
S
22
Ang
121
103
89
69
53
27
dB
-25.16
-23.78
-23.06
-21.69
-19.63
-14.40
-9.89
-6.47
-4.05
-2.36
-1.51
-1.28
-1.51
-2.09
-2.75
Ang
53
48
48
55
63
67
56
38
17
-5
-29
-51
-71
-90
-105
Mag
0.836
0.774
0.738
0.705
0.694
0.685
0.673
0.635
0.556
0.448
0.388
0.408
0.462
0.539
0.625
Ang
-18
-22
-24
-30
-37
-54
-75
-100
-131
-170
141
96
62
35
7
-8
-20
-33
-48
-64
-80
-94
-109
6
AT-41532 Typical Noise Parameters,
Common Emitter,
Z
O
= 50
, 5 V, I
C
= 2 mA
Freq.
F
min
GHz
dB
R
n
G
assoc
dB
Mag
0.35
0.48
0.51
0.60
0.65
0.70
0.74
Ang
100
178
-166
-137
-112
-92
-73
ohms
0.9
1.8
2.0
2.5
3.0
3.5
4.0
1.2
1.5
1.6
1.9
2.2
2.5
2.9
8.5
3.4
3.7
8.8
21.7
44.6
79.5
13.5
10.6
9.7
8.8
7.8
7.1
6.0
Figure 13. Gain vs. Frequency at
5 V, 2 mA.
Note: dB(|S
21
|) = 20*log(|S
21
|)
Γ
opt
gmax
dB(S|2,1|)
k
-5
25
15
20
5
0
10
0
2
1
3
4
5
6
G
(
0
1.2
0.8
1
0.2
0.4
0.6
k
FREQUENCY (GHz)
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
21
(k
±
k
2
–1)
MAG = S
12
MSG = |S
21
|/|S
12
|
k = 1 – |S
11
|
2
– |S
22
|
2
+ |D|
2
; D = S
11
S
22 –
S
12
S
21
2*|S
12
||S
21
|
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