參數(shù)資料
型號: AT-41532-TR1
英文描述: NPN SILICON TRANSISTOR
中文描述: NPN硅晶體管
文件頁數(shù): 7/14頁
文件大?。?/td> 146K
代理商: AT-41532-TR1
AT-41532 Typical Scattering Parameters,
Common Emitter, Z
O
= 50
, V
CE
= 2. 7 V, I
C
= 10 mA
Freq.
S
11
S
21
GHz
Mag
Ang
dB
Mag
Ang
0.5
0.243
-122
18.39
8.310
0.75
0.199
-149
15.19
5.751
1.0
0.184
-169
12.88
4.408
1.5
0.186
161
9.64
3.034
2.0
0.199
139
7.44
2.354
3.0
0.232
107
4.61
1.700
4.0
0.275
79
2.84
1.387
5.0
0.334
56
1.60
1.202
6.0
0.399
41
0.66
1.079
7.0
0.462
27
-0.02
0.997
8.0
0.521
14
-0.67
0.926
9.0
0.566
-2
-1.26
0.865
10.0
0.609
-18
-1.88
0.805
11.0
0.678
-28
-2.97
0.711
-101
12.0
0.722
-39
-3.38
0.678
-116
S
12
Mag
0.045
0.063
0.082
0.121
0.162
0.253
0.355
0.465
0.576
0.684
0.764
0.805
0.802
0.766
0.706
S
22
dB
-26.90
-23.99
-21.74
-18.35
-15.79
-11.93
-9.00
-6.66
-4.79
-3.30
-2.34
-1.89
-1.92
-2.32
-3.02
Ang
68
69
69
67
63
52
39
24
Mag
0.586
0.552
0.536
0.520
0.510
0.491
0.467
0.424
0.349
0.261
0.251
0.328
0.422
0.485
0.620
Ang
-21
-21
-23
-28
-35
-52
-72
-95
-125
-167
134
88
56
29
97
85
76
62
49
27
6
-12
-29
-45
-60
-75
-90
7
-12
-32
-52
-72
-91
-106
3
Figure 12. Gain vs. Frequency at
2.7 V, 10 mA.
Note: dB(|S
21
|) = 20*log(|S
21
|)
gmax
dB(S|2,1|)
k
0
25
15
20
5
10
0
2
1
3
4
5
6
G
(
0
1.25
0.75
1
0.25
0.5
k
FREQUENCY (GHz)
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
21
(k
±
k
2
–1)
MAG = S
12
MSG = |S
21
|/|S
12
|
k = 1 – |S
11
|
2
– |S
22
|
2
+ |D|
2
; D = S
11
S
22 –
S
12
S
21
2*|S
12
||S
21
|
相關PDF資料
PDF描述
AT41532 NPN SILICON TRANSISTOR
AT-42000 Up to 6 GHz Medium Power Up to 6 GHz Medium Power
AT-42000-GP4 Up to 6 GHz Medium Power Up to 6 GHz Medium Power
AT-635 Vo l t age Va r i a ble Absorptive Attenu a t o r, 35 dB DC - 2 GHz
AT-635PIN Vo l t age Va r i a ble Absorptive Attenu a t o r, 35 dB DC - 2 GHz
相關代理商/技術參數(shù)
參數(shù)描述
AT-41532-TR1G 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
AT-41532-TR2 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 50MA I(C) | SOT-323
AT-41532-TR2G 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
AT41533 制造商:AGILENT 制造商全稱:AGILENT 功能描述:General Purpose, Low Noise NPN Silicon Bipolar Transistor
AT-41533 制造商:AGILENT 制造商全稱:AGILENT 功能描述:General Purpose, Low Noise NPN Silicon Bipolar Transistor