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參數(shù)資料
| 型號： | AT-41532-TR1 |
| 英文描述： | NPN SILICON TRANSISTOR |
| 中文描述： | NPN硅晶體管 |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 146K |
| 代理商： | AT-41532-TR1 |
AT-41532 Absolute Maximum Ratings
Absolute
Maximum
[1]
1.5
20
12
50
225
150
-65 to 150
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Parameter
Units
V
V
V
mA
mW
°
C
°
C
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2,3]
Junction Temperature
Storage Temperature
Electrical Specifications,
T
A
= 25
°
C
Symbol
Parameters and Test Conditions
h
FE
Forward Current Transfer Ratio
Units
-
Min
30
Typ
150
Max
270
V
CE
= 5 V
I
C
= 5 mA
V
CB
= 3 V
V
EB
= 1 V
I
CBO
I
EBO
Collector Cutoff Current
Emitter Cutoff Current
mA
mA
0.2
1.0
Thermal Resistance:
[2]
θ
jc
= 350
°
C/W
Characterization Information,
T
A
= 25
°
C
Symbol
Parameters and Test Conditions
NF
Noise Figure
Units
dB
Min
Typ
1.0
1.4
1.9
15.5
10.5
9.0
14.5
f = 0.9 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 0.9 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 0.9 GHz
V
CE
= 5 V, I
C
= 5 mA
Associated Gain
G
A
dB
V
CE
= 5 V, I
C
= 5 mA
Power at 1 dB Gain Compression (opt tuning)
V
CE
= 5 V, I
C
= 25 mA
Gain at 1 dB Gain Compression (opt tuning)
V
CE
= 5 V, I
C
= 25 mA
Output Third Order Intercept Point,
V
CE
= 5 V, I
C
=25 mA (opt tuning)
Gain in 50
system; V
CE
= 5 V, I
C
= 5 mA
P
1dB
dBm
G
1dB
f = 0.9 GHz
dB
14.5
IP
3
f = 0.9 GHz
dBm
25
|S
21E
|
2
f = 0.9 GHz
f = 2.4 GHz
dB
12.5
13.25
5.2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT-41532-TR1G | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT-41532-TR2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 50MA I(C) | SOT-323 |
| AT-41532-TR2G | 功能描述:射頻雙極小信號晶體管 Transistor Si RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| AT41533 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:General Purpose, Low Noise NPN Silicon Bipolar Transistor |
| AT-41533 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:General Purpose, Low Noise NPN Silicon Bipolar Transistor |
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