參數(shù)資料
型號(hào): APTC60SKM24CT1G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 95 A, 600 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SP1, 12 PIN
文件頁數(shù): 7/7頁
文件大小: 251K
代理商: APTC60SKM24CT1G
APTC60SKM24CT1G
APT
C
60SKM
24CT
1G
Rev
0
August,
200
9
www.microsemi.com
7 – 7
Typical CR2 SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Th
e
rm
a
lIm
p
e
da
nc
e
(
°C
/W)
Forward Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
20
40
60
80
0
0.5
11.5
22.5
33.5
VF Forward Voltage (V)
I F
Forwa
rd
Current
(A)
Reverse Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
100
200
300
400
500
600
700
800
200
300
400
500
600
700
800
VR Reverse Voltage (V)
I R
Revers
e
Cu
rren
t(
A)
Capacitance vs.Reverse Voltage
0
200
400
600
800
1000
1200
1400
1600
1
10
100
1000
VR Reverse Voltage
C
,C
a
pa
cit
a
nce
(
p
F)
“COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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