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參數(shù)資料
| 型號： | APTC60HM70SCTG |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module |
| 中文描述： | 全-橋系列 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 352K |
| 代理商： | APTC60HM70SCTG |
APTC60HM70SCTG
A
APT website – http://www.advancedpower.com
8 – 8
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.00001
0.0001
0.001
Rectangular Pulse Duration (Seconds)
0.01
0.1
1
10
T
Forward Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
5
10
15
20
25
30
35
40
0
0.5
1
1.5
2
2.5
3
3.5
V
F
Forward Voltage (V)
I
F
Reverse Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
50
100
150
200
250
300
350
400
200
300
400
500
600
700
800
V
R
Reverse Voltage (V)
I
R
Capacitance vs.Reverse Voltage
0
100
200
300
400
500
600
700
800
1
10
100
1000
V
R
Reverse Voltage
C
“COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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