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參數(shù)資料
| 型號(hào)： | APTC60HM70SCTG |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module |
| 中文描述： | 全-橋系列 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大小： | 352K |
| 代理商： | APTC60HM70SCTG |
APTC60HM70SCTG
A
APT website – http://www.advancedpower.com
7 – 8
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, Source to Drain Voltage (V)
I
D
,
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
0
50
100
150
200
250
300
350
0
10
20
30
40
50
60
70
I
D
, Drain Current (A)
t
d
d
V
DS
=400V
R
G
=5
T
J
=125°C
L=100μH
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
120
0
10
20
I
D
, Drain Current (A)
30
40
50
60
70
t
r
f
V
DS
=400V
R
G
=5
T
J
=125°C
L=100μH
Switching Energy vs Current
E
on
E
off
0
0.5
1
1.5
2
2.5
0
10
20
I
D
, Drain Current (A)
30
40
50
60
70
S
V
DS
=400V
R
G
=5
T
J
=125°C
L=100μH
E
on
E
off
0
1
2
3
4
5
0
5
10 15 20 25 30 35 40 45 50
Gate Resistance (Ohms)
S
Switching Energy vs Gate Resistance
V
DS
=400V
I
D
=39A
T
J
=125°C
L=100μH
Hard
switching
ZVS
0
20
40
60
80
100
120
140
5
10
15
I
D
, Drain Current (A)
20
25
30
35
40
F
Operating Frequency vs Drain Current
V
DS
=400V
D=50%
R
G
=5
T
J
=125°C
T
C
=75°C
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|---|---|
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