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參數(shù)資料
| 型號(hào)： | APTC60HM70SCTG |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module |
| 中文描述： | 全-橋系列 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 352K |
| 代理商： | APTC60HM70SCTG |
APTC60HM70SCTG
A
APT website – http://www.advancedpower.com
5 – 8
Typical CoolMOS Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4V
4.5V
5V
5.5V
6V
6.5V
0
40
80
120
160
200
0
5
10
15
20
25
V
DS
, Drain to Source Voltage (V)
I
D
,
V
GS
=15&10
V
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55°C
T
J
=25°C
T
J
=125°C
0
20
40
60
80
100
120
140
0
1
2
3
4
5
6
7
V
GS
, Gate to Source Voltage (V)
I
D
,
V
DS
> I
D
(on)xR
DS
(on)MAX
250μs pulse test @ < 0.5 duty cycle
R
DS
(on) vs Drain Current
V
GS
=10V
V
GS
=20V
0.9
0.95
1
1.05
1.1
0
10
20
30
40
50
60
I
D
, Drain Current (A)
R
D
(
Normalized to
V
GS
=10V @ 19.5A
0
5
10
15
20
25
30
35
40
45
25
50
75
100
125
150
T
C
, Case Temperature (°C)
I
D
,
DC Drain Current vs Case Temperature
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTC60HM70T1G | 功能描述:MOSFET PWR MOD BULL BRIDGE SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC60HM70T3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge Super Junction MOSFET Power Module |
| APTC60HM70T3G | 功能描述:MOSFET PWR MOD FULL BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC60HM83FT2G | 功能描述:MOSFET N CH 600V 36A RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:CoolMOS™ 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC60HM991G | 制造商:Microsemi Corporation 功能描述: |
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