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參數資料
| 型號： | APTC60HM70SCTG |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module |
| 中文描述： | 全-橋系列 |
| 文件頁數： | 2/8頁 |
| 文件大?。?/td> | 352K |
| 代理商： | APTC60HM70SCTG |
APTC60HM70SCTG
A
APT website – http://www.advancedpower.com
2 – 8
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
V
GS
= 0V,V
DS
= 600V
V
GS
= 0V,V
DS
= 600V
V
GS
= 10V, I
D
= 19.5A
V
GS
= V
DS
, I
D
= 1mA
V
GS
= ±20
V, V
DS
= 0V
Min
2.1
Typ
3
Max
250
500
70
3.9
±100
Unit
T
j
= 25°C
T
j
= 125°C
I
DSS
Zero Gate Voltage Drain Current
μA
R
DS(on)
V
GS(th)
I
GSS
Dynamic Characteristics
Symbol Characteristic
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Q
g
Total gate Charge
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
m
V
nA
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
Min
Typ
7015
2565
212
259
Max
Unit
pF
Q
gs
Q
gd
Gate – Source Charge
29
Gate – Drain Charge
V
GS
= 10V
V
Bus
= 300V
I
D
= 39A
111
nC
T
d(on)
T
r
T
d(off)
T
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
21
30
283
84
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 400V
I
D
= 39A
R
G
= 5
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 400V
I
D
= 39A,
R
G
= 5
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 400V
I
D
= 39A,
R
G
= 5
ns
E
on
Turn-on Switching Energy
402
E
off
Turn-off Switching Energy
980
μJ
E
on
Turn-on Switching Energy
657
E
off
Turn-off Switching Energy
1206
μJ
Series diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Test Conditions
Min
200
Typ
30
1.1
1.4
0.9
Max
250
500
1.15
Unit
V
T
j
= 25°C
T
j
= 125°C
T
c
= 85°C
I
RM
Maximum Reverse Leakage Current
V
R
=200V
μA
I
F
DC Forward Current
A
I
F
= 30A
I
F
= 60A
I
F
= 30A
V
F
Diode Forward Voltage
T
j
= 125°C
V
T
j
= 25°C
24
t
rr
Reverse Recovery Time
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
48
ns
33
150
Q
rr
Reverse Recovery Charge
I
F
= 30A
V
R
= 133V
di/dt = 200A/μs
nC
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