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參數(shù)資料
| 型號(hào)： | APT83GU30S |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | POWER MOS 7 IGBT |
| 中文描述： | IGBT的功率MOS 7 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 99K |
| 代理商： | APT83GU30S |
0
APT83GU30B_S
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 150V
I
C
= 45A
T
J
= 150°C, R
G
= 5
,
V
GE
=
15V, L = 100μH,V
CE
= 300V
Inductive Switching (25°C)
V
CC
= 200V
V
GE
= 15V
I
C
= 45A
R
G
= 20
T
J
= +25°C
Inductive Switching (125°C)
V
CC
= 200V
V
GE
= 15V
I
C
= 45A
R
G
= 20
T
J
= +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
THERMAL AND MECHANICAL CHARACTERISTICS
MIN
TYP
MAX
4385
406
31
7.0
144
29
44
295
69
29
308
122
TBD
189
354
69
29
355
226
TBD
287
503
UNIT
pF
V
nC
A
ns
μ
J
ns
μ
J
UNIT
°C/W
gm
MIN
TYP
MAX
0.23
N/A
5.90
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
R
Θ
JC
R
Θ
JC
W
T
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the E
on2
test circuit. (See Figures 21, 22.)
6 E
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 Countinous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
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