參數(shù)資料
型號： APT8014L2LL-03
廠商： Advanced Power Technology Ltd.
英文描述： Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
中文描述： 電源MOS 7TM是一個低損耗，高電壓，N溝道增強型功率MOSFET的新一代。
文件頁數(shù)： 4/5頁
文件大小： 97K
代理商： APT8014L2LL-03
APT8014L2LL
0
Crss
Ciss
Coss
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
D
= 52A
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
160
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
140
V
G
,
I
D
,
I
D
,
C
1
10
100
800
0
10
20
30
40
50
0
50
100
150
200
250
300
350 400
0.3
0.5
0.7
0.9
1.1
1.3
1.5
208
100
50
10
5
1
12
8
4
0
TC =+25°C
TJ =+150°C
SINGLE PULSE
10mS
1mS
100μS
TJ =+150°C
TJ =+25°C
I
(A)
I
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
12000
I
D
(A)
R
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
FIGURE 16, SWITCHING ENERGY vs CURRENT
V
DD
= 533V
R
G
= 3
T
J
= 125°C
L = 100μH
E
on
E
off
t
r
t
f
S
μ
J
t
d
d
μ
J
t
r
f
(
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35 40
45
50
V
DD
= 533V
I
D
= 52A
T
J
= 125°C
L = 100μH
E
ON
includes
diode reverse recovery.
VDS= 400V
VDS= 160V
VDS= 640V
t
d(on)
t
d(off)
E
on
E
off
140
120
100
80
60
40
20
0
3000
2500
2000
1500
1000
500
0
V
DD
= 533V
R
G
= 3
T
J
= 125°C
L = 100μH
V
DD
= 533V
R
G
= 3
T
J
= 125°C
L = 100μH
E
ON
includes
diode reverse recovery.
20,000
10,000
1,000
100
100
10
1
OPERATION HERE
LIMITED BY R
DS
(ON)
120
100
80
60
40
20
0
10000
8000
6000
4000
2000
0
相關PDF資料
PDF描述
APT8015JVFR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT8015JVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT8015 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT8018JN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT8018 ECONOLINE: REC3-S_DRW(Z)/H4,H6 - Safety standards and approval: EN 60950 certified, rated for 250VAV (LVD test report)- Applied for Ul 1950 Component Recognised Certification- 3W DIP Package- 4kVDC & 6kVDC Isolation- Regulated Output- Continuous Short Circiut Protection Auto-Restarting
相關代理商/技術參數(shù)
參數(shù)描述
APT8014L2LLG 功能描述:MOSFET N-CH 800V 52A TO-264MAX RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
APT8015 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT8015JVFR 功能描述:MOSFET N-CH 800V 44A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS V® 標準包裝:10 系列:*
APT8015JVFR_05 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT8015JVR 功能描述:MOSFET N-CH 800V 44A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS V® 標準包裝:10 系列:*
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