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| 型號： | APT8014L2LL-03 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| 中文描述： | 電源MOS 7TM是一個低損耗，高電壓，N溝道增強(qiáng)型功率MOSFET的新一代。 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 97K |
| 代理商： | APT8014L2LL-03 |
DYNAMIC CHARACTERISTICS
APT8014L2LL
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
SINGLE PULSE
Z
θ
J
,
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.5
0.1
0.05
0.3
0.7
0.9
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
4 Starting T
j
=
+25°C, L = 2.37mH, R
G
=
25
, Peak I
L
= 52A
5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
I
≤
-
I
52A
di
/
dt
≤
700A/μs
V
≤
800V
T
≤
150
°
C
6 Eon includes diode reverse recovery. See figures 18, 20.
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
52A
)
Reverse Recovery Time (I
S
= -I
D
52A
, dl
S
/dt = 100A/μs)
Reverse Recovery Charge (I
S
= -I
D
52A
, dl
S
/dt = 100A/μs)
Peak Diode Recovery
dv
/
dt 5
UNIT
Amps
Volts
ns
μC
V/ns
MIN
TYP
MAX
52
208
1.3
930
29
10
Symbol
R
θ
JC
R
θ
JA
MIN
TYP
MAX
0.14
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv
/
dt
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
6
Turn-off Switching Energy
Turn-on Switching Energy
6
Turn-off Switching Energy
MIN
TYP
MAX
7238
1402
248
285
30
170
20
19
69
15
1091
1135
1662
1383
UNIT
pF
nC
ns
μ
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Test Conditions
V
GS
= 0V
V
DS
= 25V
f
= 1 MHz
V
GS
= 10V
V
DD
= 400V
I
D
= 52A
@ 25°C
RESISTIVE SWITCHING
V
GS
=
15V
V
DD
=
400V
I
D
=
52A
@ 25°C
R
G
=
0.6
INDUCTIVE SWITCHING @ 25°C
V
DD
=
533V, V
GS
= 15V
I
D
=
52A, R
G
=
1.7
INDUCTIVE SWITCHING @ 125°C
V
DD
=
533V, V
GS
= 15V
I
D
=
52A, R
G
=
1.7
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