參數(shù)資料
型號(hào): APT8014L2LL-03
廠商: Advanced Power Technology Ltd.
英文描述: Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
中文描述: 電源MOS 7TM是一個(gè)低損耗,高電壓,N溝道增強(qiáng)型功率MOSFET的新一代。
文件頁數(shù): 3/5頁
文件大小: 97K
代理商: APT8014L2LL-03
0
APT8014L2LL
Typical Performance Curves
R
D
(
I
D
,
I
D
,
(
V
G
(
B
D
,
R
D
(
I
D
,
(
V
5.5V
6V
6.5V
5V
VGS =15 & 10V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VD250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
140
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
I
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
, CASE TEMPERATURE (°C)
T
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I
D
= 26A
V
GS
= 10V
T
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
T
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
7V
8V
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
0
20
40
60
80
100
120
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125 150
-50
-25
0
25
50
75
100
125
150
120
100
80
60
40
20
0
60
50
40
30
20
10
0
2.0
1.5
1.0
0.5
0.0
NORMALIZED TO
V
GS
= 10V @ 26A
0.0509
0.0894
0.0522F
0.988F
Power
(Watts)
RC MODEL
Junction
temp. ( ”C)
Case temperature
140
120
100
80
60
40
20
0
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.1
1.0
0.9
0.8
0.7
0.6
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