參數(shù)資料
型號： APT50GP60JDQ2
廠商： Advanced Power Technology Ltd.
英文描述： POWER MOS 7 IGBT
中文描述： IGBT的功率MOS 7
文件頁數(shù)： 7/9頁
文件大?。?/td> 455K
代理商： APT50GP60JDQ2
0
APT50GP60JDQ2
TYPICAL PERFORMANCE CURVES
Characteristic / Test Conditions
Maximum Average Forward Current (T
C
= 100°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Symbol
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F
= 50A
I
F
= 100A
I
F
= 50A, T
J
= 125°C
Forward Voltage
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
2.1
2.6
1.75
APT50GP60JDQ2
30
42
320
DYNAMIC CHARACTERISTICS
Characteristic
Symbol
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
21
-
105
-
115
-
3
-
-
125
-
465
-
7
-
-
60
-
830
-
23
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F
= 30A, di
F
/dt = -200A/
μ
s
V
R
= 400V, T
C
= 25
°
C
I
F
= 30A, di
F
/dt = -200A/
μ
s
V
R
= 400V, T
C
= 125
°
C
I
F
= 30A, di
F
/dt = -1000A/
μ
s
V
R
= 400V, T
C
= 125
°
C
I
F
= 1A, di
F
/dt = -100A/
μ
s, V
R
= 30V, T
J
= 25
°
C
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
Z
θ
J
,
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0
0.5
SINGLE PULSE
0.1
0.05
0.3
0.7
Peak T
J
= P
DM
x Z
θ
JC + TC
Duty Factor D =
t1
/
t2
t2
t1
P
D
Note:
D = 0.9
0.320
0.515
0.375
0.00278
0.0421
0.242
Power
(watts)
Junction
(
°
C)
RC MODEL
Case temperature
(
°
C)
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