參數(shù)資料
型號(hào)： APT50GP60JDQ2
廠商： Advanced Power Technology Ltd.
英文描述： POWER MOS 7 IGBT
中文描述： IGBT的功率MOS 7
文件頁(yè)數(shù)： 4/9頁(yè)
文件大?。?/td> 455K
代理商： APT50GP60JDQ2
0
APT50GP60JDQ2
V
GE
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C
V
CE
=
400V
R
=
4.3
L = 100μH
E
O
,
t
r
R
t
d
,
FIGURE 15, Switching Energy Losses vs. Gate Resistance
E
O
,
t
f
F
t
d
(
,
FIGURE 16, Switching Energy Losses vs Junction Temperature
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
, GATE RESISTANCE (OHMS)
T
, JUNCTION TEMPERATURE (°C)
V
CE
= 400V
T
J
= 25°C
or
125°C
R
= 4.3
L = 100μH
20 30 40 50 60 70 80 90 100 110
140
120
100
80
60
40
20
0
120
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
500
0
4000
3500
3000
2500
2000
1500
1000
500
0
V
GE
= 15V
20 30 40 50 60 70 80 90 100 110
20 30 40 50 60 70
80 90 100 110
20 30 40 50 60 70 80 90 100 110
20 30 40
50 60
70 80 90 100 110
20 30 40 50 60 70 80 90 100 110
0
10
20
30
40
50
0
25
50
75
100
125
R
G
=
4.3
, L
=
100
μ
H, V
CE
=
400V
T
J
=
25 or 125°C,V
GE
=
15V
25
20
15
10
5
0
90
80
70
60
50
40
30
20
10
0
4000
3500
3000
2500
2000
1500
1000
500
0
6000
5000
4000
3000
2000
1000
0
T
J
=
125°C, V
GE
=
15V
T
J
=
25°C, V
GE
=
15V
R
G
=
4.3
, L
=
100
μ
H, V
CE
=
400V
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3
T
J
=
125°C
T
J
=
25°C
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3
T
J
=
125°C
T
J
=
25°C
E
on2,
100A
E
off,
100A
V
CE
= 400V
V
GE
= +15V
T
J
= 125°C
E
on2,
25A
E
off,
25A
E
on2,
50A
E
off,
50A
E
on2,
100A
E
off,
100A
E
on2,
25A
E
off,
25A
E
on2,
50A
E
off,
50A
V
CE
= 400V
V
GE
= +15V
R
G
= 4.3
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