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參數(shù)資料
| 型號： | APT50GP60JDQ2 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | POWER MOS 7 IGBT |
| 中文描述： | IGBT的功率MOS 7 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 455K |
| 代理商： | APT50GP60JDQ2 |
0
APT50GP60JDQ2
TYPICAL PERFORMANCE CURVES
70
C
,
V
C
,
I
C
,
I
C
,
V
I
C
D
V
C
,
V
G
,
I
C
,
250μs PULSE
TEST<0.5 % DUTY
CYCLE
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
70
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
33.5
3
2.5
2
1.5
1
0.5
0
140
120
100
80
60
40
20
0
T
J
= 125°C
T
J
= 25°C
T
J
= -55°C
T
J
= 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
V
= 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
T
J
= 125°C
T
J
= 25°C
T
J
= -55°C
T
J
= 125°C
T
J
= 25°C
T
J
= -55°C
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T
J
= 25°C)
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T
J
= 125°C)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
GATE CHARGE (nC)
FIGURE 4, Gate Charge
V
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
T
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
T
, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
T
, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
7
8
9 10
0
20 40 60
80 100 120 140 160 180
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100 125
-50 -25
0
25
50
75 100 125 150
V
CE
= 480V
V
CE
= 300V
V
CE
= 120V
I
C
= 50A
T
J
= 25°C
I
C
= 100A
I
C
= 50A
I
C
= 25A
I
C
= 100A
I
C
= 50A
I
C
= 25A
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