參數(shù)資料
型號(hào)： AP9930GM
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述： 5.5 A, 30 V, 0.033 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SOP-8
文件頁(yè)數(shù)： 2/7頁(yè)
文件大小： 106K
代理商： AP9930GM
N-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
Static Drain-Source On-Resistance
2
-
0.04
-
V/
℃
R
DS(ON)
V
GS
=10V, I
D
=5A
-
-
33
m
Ω
V
GS
=4.5V, I
D
=3A
-
-
60
m
Ω
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
I
DSS
Forward Transconductance
V
DS
=10V, I
D
=5A
-
5.2
-
S
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=30V, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
GS
=±25V
I
D
=5A
V
DS
=15V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=6
Ω
,
V
GS
=10V
R
D
=15
Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
-
-
-
-
-
-
-
-
-
-
7
2
4
7
25
±100
10
-
-
-
-
-
uA
nA
nC
nC
nC
ns
ns
ns
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
10
18
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
-
-
8
-
ns
600
229.8
94
960
-
-
pF
pF
pF
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Test Conditions
Min.
-
-
-
Typ.
-
21
16
Max.
1.2
-
-
Units
V
ns
nC
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
I
S
=1.2A, V
GS
=0V
I
S
=1.7A, V
GS
=0V
dI/dt=100A/μs
AP9930GM
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