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參數(shù)資料
| 型號： | AP9972GI |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 35 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, TO-220CFM, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 81K |
| 代理商： | AP9972GI |
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Low Gate Charge
Single Drive Requirement
Lower On-resistance
BV
DSS
R
DS(ON)
I
D
60V
18m
Ω
35A
▼
▼
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
P
D
@T
C
=25
℃
Total Power Dissipation
Linear Derating Factor
Units
V
V
A
A
A
W
W/
℃
T
STG
T
J
℃
℃
Symbol
Value
4
62
Units
℃
/W
℃
/W
Rthj-c
Rthj-a
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
31.3
0.25
-55 to 150
Operating Junction Temperature Range
-55 to 150
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
22
120
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
±25
35
Parameter
Rating
60
Drain-Source Voltage
Pb Free Plating Product
200105051
AP9972GI
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is universally preferred for all
commercial-industrial through hole applications.
GDS
TO-220CFM(I)
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| AP9972GI_08 | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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