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參數(shù)資料
| 型號(hào)： | AP9962J |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE |
| 中文描述： | N溝道增強(qiáng)模式 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 82K |
| 代理商： | AP9962J |
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Low On-resistance
Single Drive Requirement
Surface Mount Package
BV
DSS
R
DS(ON)
I
D
40V
20m
Ω
32A
▼
▼
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
℃
I
D
@T
A
=100
℃
I
DM
P
D
@T
A
=25
℃
Total Power Dissipation
Linear Derating Factor
Units
V
V
A
A
A
W
W/
℃
T
STG
T
J
℃
℃
Symbol
Value
4.5
110
Unit
℃
/W
℃
/W
Rthj-c
Rthj-a
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Operating Junction Temperature Range
34.7
0.27
-55 to 150
-55 to 150
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
20
150
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
32
Parameter
Rating
40
Drain-Source Voltage
201028031
AP9962H/J
±20
G
D
S
GD
S
TO-252(H)
GDS
TO-251(J)
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9962J) are available for low-profile applications.
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