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參數(shù)資料
| 型號： | AP9930M |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | 2N AND 2P-CHANNEL ENHANCEMENT |
| 中文描述： | 2N和二路溝道增強(qiáng) |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 105K |
| 代理商： | AP9930M |
Advanced Power
Electronics Corp.
2N AND 2P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼
Simple Drive Requirement
▼
Low On-resistance
Full Bridge Application on
LCD Monitor Inverter
N-CH
BV
DSS
R
DS(ON)
I
D
BV
DSS
R
DS(ON)
I
D
30V
33m
Ω
6.3A
-30V
55m
Ω
-5.1A
▼
P-CH
Description
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
30
± 25
Units
P-channel
V
DS
V
GS
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
P
D
@T
A
=25
℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
-30
±25
V
V
6.3
4.2
20
2.0
0.016
-55 to 150
-55 to 150
-5.1
-3.4
-20
A
A
A
W
W/
℃
T
STG
T
J
℃
℃
Symbol
Value
62.5
Unit
℃
/W
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
Data and specifications subject to change without notice
Parameter
200612032
AP9930M
Thermal Data
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
N1G
N1D/P1D
N1S/N2S
N2G
P1G
P1S/P2S
N2D/P2D
P2G
SO-8
N1G
N1S
P1G
P1S
P1N1D
N2G
N2S
P2G
P2S
P2N2D
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