參數(shù)資料
型號： AP9585J
廠商： ADVANCED POWER ELECTRONICS CORP
英文描述： P-CHANNEL ENHANCEMENT MODE
中文描述： P溝道增強(qiáng)型
文件頁數(shù)： 2/4頁
文件大小： 82K
代理商： AP9585J
AP9585H/J
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-80
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=-1mA
Static Drain-Source On-Resistance
2
-
-0.07
-
V/
℃
R
DS(ON)
V
GS
=-10V, I
D
=-10A
-
-
180
m
Ω
V
GS
=-4.5V, I
D
=-6A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-6A
V
DS
=-80V, V
GS
=0V
V
DS
=-64V, V
GS
=0V
V
GS
= ±25V
I
D
=-6A
V
DS
=-64V
V
GS
=-4.5V
V
DS
=-40V
I
D
=-6A
R
G
=3.3
Ω
,
V
GS
=-10V
R
D
=6.7
Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
-
-
200
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-3
-
-1
-25
±
100
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
10
-
-
-
19
5
7
10
15
64
56
1740
140
90
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
30
-
-
-
-
-
-
2780
-
-
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Test Conditions
Min.
-
-
-
Typ.
-
86
364
Max.
-1.2
-
-
Units
V
ns
nC
Forward On Voltage
2
Reverse Recovery Time
2
I
S
=-6A, V
GS
=0V
I
S
=-6A, V
GS
=0V,
dI/dt=-100A/μs
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
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