參數(shù)資料
型號(hào)： AP9620M
廠商： ADVANCED POWER ELECTRONICS CORP
英文描述： P-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述： P溝道增強(qiáng)型功率MOSFET
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 90K
代理商： AP9620M
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Low On Resistance
apable of 2.5V Drive
Fast Switching
Simple Drive Requirement
BV
DSS
R
DS(ON)
I
D
-20V
20m
Ω
-9.5A
C
▼
▼
▼
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
P
D
@T
A
=25
℃
Linear Derating Factor
Storage Temperature Range
Units
V
V
A
A
A
W
W/
℃
T
STG
T
J
℃
℃
Symbol
Value
50
Unit
℃
/W
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
Data and specifications subject to change without notice
20020502
AP9620M
Rating
-20
±8
-9.5
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
-7.6
-76
2.5
0.02
-55 to 150
-55 to 150
Operating Junction Temperature Range
Thermal Data
Parameter
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S
S
S
G
D
D
D
D
SO-8
G
D
S
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